• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of removing polishing residue from a substrate includes placing the substrate in a pressure chamber, pressurizing the pressure chamber, and maintaining the supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate. Following removal of the polishing residue from the substrate, the pressure chamber is flushed and vented.
    公开号:US20010008800A1
    申请号:US09/796,300
    申请日:2001-02-27
    公开日:2001-07-19
    发明作者:Robert Koch
    申请人:Supercritical Systems Inc；
    IPC主号:H01L21-02052
    专利说明:
    [0001] This application is a continuation of U.S. patent application No. 09/407,628, filed on Sep. 28, 1999, which claims priority from U.S. Provisional Application No. 60/101,988, filed on Sep. 28, 1998, both of which are incorporated by reference. [0001] FIELD OF THE INVENTION
    [0002] The present invention relates to the field of removing polishing residue from a substrate. More particularly, the present invention relates to the field of removing polishing residue from a substrate using a supercritical fluid. [0002] BACKGROUND OF THE INVENTION
    [0003] Manufacture of semiconductor devices commonly employ a Chemical Mechanical Polishing (CMP) process to planarize a wafer surface. The CMP process removes top surface layers from a semiconductor wafer. The CMP process leaves a CMP residue of CMP chemicals and particles that is difficult and problematic to remove by current post-CMP cleaning methods. It is well known that the CMP residue predominantly remains in surface features on the wafer surface. [0003]
    [0004] The current post-CMP cleaning methods require that the wafer surface be mechanically washed or brushed by a commercially available machine called a scrubber. The scrubber may employ heat or ultrasonic augmentation and typically requires immersion times of two to twenty minutes to achieve complete removal of the CMP residue from the wafer surface. Because the wafer surface is mechanically washed or brushed by the scrubber, the scrubber leaves defects or scratches in the wafer surface. [0004]
    [0005] It is well known that, if some of the CMP residue remains in the surface features, performance of the semiconductor devices will be degraded. Additionally, it is well known that the cost of manufacturing a wafer of the semiconductor devices is proportional to the time employed for each processing step. [0005]
    [0006] It would be advantageous to be able to remove the CMP residue without using the mechanical washing or brushing employed by the scrubber in order to reduce an amount of the defects and the scratches. Further, it would be advantageous to more effectively remove the CMP residue from the surface features on the wafer surface. [0006]
    [0007] What is needed is a method of removing polishing residue that does not use the mechanical washing or brushing. [0007]
    [0008] What is further needed is a method of removing polishing residue that is more effective than the mechanical washing or brushing in removing the polishing residue from the surface features. [0008]
    [0009] What is additionally needed is a method of removing the polishing residue that is more efficient than the scrubber. [0009] SUMMARY OF THE INVENTION
    [0010] The present invention is a method of removing polishing residue from a surface of a semiconductor substrate. The semiconductor substrate, including the polishing residue on the surface, is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the solvent are maintained in contact with the semiconductor substrate until the polishing residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented. [0010] BRIEF DESCRIPTION OF THE DRAWINGS
    [0011] FIG. 1 is a flow chart illustrating the steps of a method of the present invention. [0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
    [0012] The present invention utilizes high solvency and cleaning characteristics of supercritical carbon dioxide to assist in a post-CMP cleaning process. In the preferred embodiment, a small amount of a chemical, i.e., a solvent or a solvent mixture, is added to affect the post-CMP cleaning process as compared to the prior art. In the present invention, the supercritical carbon dioxide carries a small amount of the chemical to a wafer surface to be cleaned and is then recycled back to a carbon dioxide compressor for reuse. [0012]
    [0013] The chemical is soluble or insoluble in carbon dioxide and is not damaging to semiconductor device materials. The high solvency and solubilizing ability of the supercritical carbon dioxide makes this method fast, safe, and very quick. High turbulence at wafer surface features in conjunction with hyper-efficient mass transport of a chemical co-solvent package can clean the wafer surface in less than five minutes. CMP residue of CMP chemicals and abrasive particles is effectively removed without direct mechanical contact, in contrast to current methods. Another advantage of the present invention is that the wafer surface contains fewer defects as compared to mechanical scrubber methods. [0013]
    [0014] The solvency of supercritical carbon dioxide increases with pressure. Diffusivity and viscosity at or above a critical point of carbon dioxide remains similar to that of a gas phase. Because density above the critical point of the carbon dioxide is nearly equal to that of a liquid state, the supercritical carbon dioxide carries the chemical onto the wafer surface and cleans sub-micron surface features of a modern semiconductor device. In the presert invention, the supercritical carbon dioxide also functions to carry away the CMP residue, including the CMP chemicals and abrasive particles, from the sub-micron surface features of the modern semiconductor device. Thus, a small amount of the chemical mixed with the supercritical carbon dioxide performs the post-CMP cleaning process and also cleans away any remaining unwanted chemicals and the CMP residue. [0014]
    [0015] The preferred embodiment of the post-CMP cleaning process of the present invention is illustrated in FIG. 1. The semiconductor wafer including the CMP residue is placed in a pressure chamber in a first process step [0015] 20. The pressure chamber is then sealed and pressurized with the carbon dioxide, in a second process step 22. As the pressure inside the pressure chamber builds, the carbon dioxide becomes liquid and then reaches supercritical temperature and pressure. Typical conditions for this process range from 20 to 70° C. and 1050 and 6000 psig. When the desired conditions are reached, a small amount of the chemical is introduced into a supercritical carbon dioxide stream and thus added into the pressure chamber to begin cleaning, in a third process step 24. Typical types and amounts of chemicals are:
    [0016] a. 0.1-15.0 v/v % of isopropyl alcohol and related alcohols; [0016]
    [0017] b. 0.1-15.0 v/v % of propylene carbonate and related carbonates; [0017]
    [0018] c. 0.1-15.0 v/v % of ethylene glycol and related glycols; [0018]
    [0019] d. 0.001-5.0 v/v % of ozone; [0019]
    [0020] e. 0.1-15.0 v/v % of hydrogen fluoride and related fluorides; [0020]
    [0021] f. 0.1-15.0 v/v % of ammonium hydroxide and related hydroxides; [0021]
    [0022] g. 0.1-15.0 v/v % of citric acid and related acids; and [0022]
    [0023] h. 0.1-15.0 v/v % of a mixture of any of the above chemicals. [0023]
    [0024] The chemical is preferably selected from a preferred group including the isopropyl alcohol, the propylene carbonate, the ethylene glycol, the ozone, the hydrogen fluoride, the ammonium hydroxide, and the citric acid, or a mixture thereof. [0024]
    [0025] The chemical is alternatively selected from an alternative group including the alcohols related to the isopropyl alcohol, the carbonates related to the propylene carbonate, the glycols related to the ethylene glycol, the fluorides related to the hydrogen fluoride, the hydroxides related to the ammonium hydroxide, and the acids related to the citric acid, or a mixture selected from these chemicals and the preferred group. [0025]
    [0026] The post-CMP cleaning process continues with recirculation of the supercritical carbon dioxide and with mixing, i.e., agitating, thereof inside the pressure chamber until the CMP residue is removed, typically from one-half to five minutes, in a fourth process step [0026] 26. The pressure chamber is then flushed with pure supercritical carbon dioxide or liquid carbon dioxide to remove all traces of any remaining chemicals, in a fifth process step 28. Finally, the chamber is vented to atmosphere and the wafer is removed, in a sixth process step 30. At this point, an optional rinse in DI (deionized) or ultra pure water may be performed to finish the cleaning process.
    [0027] The present invention uses the supercritical carbon dioxide in combination with the small amount of a chemical admixture to remove the CMP residue from the surfaces of the semiconductor devices in a post-CMP cleaning system. The post-CMP cleaning system includes a wafer process chamber, a pump, a sensor system, a pressure and flow regulating system, and a recovery chamber. The wafer process chamber holds the semiconductor wafer or semiconductor wafers. The pump is capable of compressing liquid carbon dioxide beyond the critical point. The sensor system measures temperature, pressure and flows. The pressure and flow regulating system connects a carbon dioxide source to the wafer chamber at the desired conditions. The recovery chamber collects solid and liquid material exhausted from the wafer chamber. [0027]
    [0028] The post-CMP cleaning system preferably includes a temperature control system for heating the wafer process chamber. [0028]
    [0029] The post-CMP cleaning system preferably includes a chemical introduction system for adding precise amounts of the chemical into the supercritical carbon dioxide process stream. [0029]
    [0030] The post-CMP cleaning process of the present invention includes the following steps. The wafer is placed in the wafer process chamber. The post-CMP cleaning system is preferably purged with inert gas or the carbon dioxide. Alternatively, the post-CMP cleaning system is not purged. Next, the post-CMP cleaning system is pressurized with the carbon dioxide to achieve supercritical conditions. A desired amount of the chemical is added into the carbon dioxide, which forms chemical laden supercritical carbon dioxide. The chemical-laden supercritical carbon dioxide is contacted with the wafer. The wafer process chamber is preferably flushed using the supercritical carbon dioxide to remove contaminants. Alternatively, the wafer process chamber is flushed using the liquid carbon dioxide. The post CMP cleaning system is then depressurized to allow removal of the wafer. [0030]
    [0031] The post-CMP cleaning process results in the wafer surface having a defect level that is much lower than current cleaning methods, which utilize mechanical contact of the wafer with roller or brush equipment. [0031]
    [0032] The post-CMP cleaning process removes the CMP residue from semiconductors, bare silicon wafers, metallic covered wafers, and memory storage devices. It will be readily apparent to one of ordinary skill in the art that the post-CMP cleaning process removes the CMP residue from other substrates, including other semiconductor substrates, that have been polished or planarized in the CMP process. [0032]
    [0033] It will be readily apparent to one skilled in the art that other various modifications may be made to the preferred embodiment without departing from the spirit and scope of the invention as defined by the appended claims. [0033]
    权利要求:
    Claims (3)
    [1" id="US-20010008800-A1-CLM-00001] 1. A method of removing a polishing residue from a surface of a substrate comprising the step of maintaining a supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate.
    [2" id="US-20010008800-A1-CLM-00002] 2. A method of removing a polishing residue from a surface of a substrate comprising the step of maintaining supercritical carbon dioxide in contact with the substrate until the polishing residue is removed from the substrate.
    [3" id="US-20010008800-A1-CLM-00003] 3. A method of removing a polishing residue from a surface of a substrate comprising the step of maintaining supercritical carbon dioxide and a solvent in contact with the substrate until the polishing residue is removed from the substrate.
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6425956B1|2001-01-05|2002-07-30|International Business Machines Corporation|Process for removing chemical mechanical polishing residual slurry|
    US20040031441A1|2001-07-25|2004-02-19|Yusuke Muraoka|High-pressure treatment apparatus and high-pressure treatment method|
    US6696228B2|2001-10-23|2004-02-24|Ums Co., Ltd.|Method and apparatus for removing organic films|
    US6800142B1|2002-05-30|2004-10-05|Novellus Systems, Inc.|Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment|
    US20050042877A1|2003-04-16|2005-02-24|Salfelder Joseph F.|Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers|
    US20050191861A1|2003-03-21|2005-09-01|Steven Verhaverbeke|Using supercritical fluids and/or dense fluids in semiconductor applications|
    EP1572833A1|2002-10-31|2005-09-14|Advanced Technology Materials, Inc.|Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal|
    US6953654B2|2002-03-14|2005-10-11|Tokyo Electron Limited|Process and apparatus for removing a contaminant from a substrate|
    US20090255061A1|2000-10-11|2009-10-15|Eminent Technologies Llc|Cleaning system utilizing an organic solvent and a pressurized fluid solvent|
    US20180358231A1|2017-06-09|2018-12-13|International Business Machines Corporation|Low oxygen cleaning for cmp equipment|US2617719A|1950-12-29|1952-11-11|Stanolind Oil & Gas Co|Cleaning porous media|
    FR2128426B1|1971-03-02|1980-03-07|Cnen||
    US3890176A|1972-08-18|1975-06-17|Gen Electric|Method for removing photoresist from substrate|
    US4341592A|1975-08-04|1982-07-27|Texas Instruments Incorporated|Method for removing photoresist layer from substrate by ozone treatment|
    US4029517A|1976-03-01|1977-06-14|Autosonics Inc.|Vapor degreasing system having a divider wall between upper and lower vapor zone portions|
    US4091643A|1976-05-14|1978-05-30|Ama Universal S.P.A.|Circuit for the recovery of solvent vapor evolved in the course of a cleaning cycle in dry-cleaning machines or plants, and for the de-pressurizing of such machines|
    US4219333B1|1978-07-03|1984-02-28|||
    DE3145815C2|1981-11-19|1984-08-09|AGA Gas GmbH, 2102 Hamburg|Process for removing peelable layers of material from coated objects,|
    FR2536433B1|1982-11-19|1985-05-03|Privat Michel||
    US4865061A|1983-07-22|1989-09-12|Quadrex Hps, Inc.|Decontamination apparatus for chemically and/or radioactively contaminated tools and equipment|
    US4475993A|1983-08-15|1984-10-09|The United States Of America As Represented By The United States Department Of Energy|Extraction of trace metals from fly ash|
    GB8332394D0|1983-12-05|1984-01-11|Pilkington Brothers Plc|Coating apparatus|
    US4877530A|1984-04-25|1989-10-31|Cf Systems Corporation|Liquid CO2 /cosolvent extraction|
    US4693777A|1984-11-30|1987-09-15|Kabushiki Kaisha Toshiba|Apparatus for producing semiconductor devices|
    US4960140A|1984-11-30|1990-10-02|Ishijima Industrial Co., Ltd.|Washing arrangement for and method of washing lead frames|
    US4788043A|1985-04-17|1988-11-29|Tokuyama Soda Kabushiki Kaisha|Process for washing semiconductor substrate with organic solvent|
    US4749440A|1985-08-28|1988-06-07|Fsi Corporation|Gaseous process and apparatus for removing films from substrates|
    CA1287594C|1986-04-04|1991-08-13|Miroslav Eror|Method and apparatus for handling and processing wafer like materials|
    GB8709064D0|1986-04-28|1987-05-20|Varian Associates|Wafer handling arm|
    US4670126A|1986-04-28|1987-06-02|Varian Associates, Inc.|Sputter module for modular wafer processing system|
    US4917556A|1986-04-28|1990-04-17|Varian Associates, Inc.|Modular wafer transport and processing system|
    US4951601A|1986-12-19|1990-08-28|Applied Materials, Inc.|Multi-chamber integrated process system|
    JPS63157870A|1986-12-19|1988-06-30|Anelva Corp|Substrate treatment device|
    AT102397T|1986-12-19|1994-03-15|Applied Materials Inc|INTEGRATED PROCESSING SYSTEM WITH MULTIPLE CHAMBER.|
    US4759917A|1987-02-24|1988-07-26|Monsanto Company|Oxidative dissolution of gallium arsenide and separation of gallium from arsenic|
    DE3861050D1|1987-05-07|1990-12-20|Micafil Ag|METHOD AND DEVICE FOR EXTRACTING OIL OR POLYCHLORIZED BIPHENYL FROM IMPREGNATED ELECTRICAL PARTS BY MEANS OF A SOLVENT AND DISTILLING THE SOLVENT.|
    US4924892A|1987-07-28|1990-05-15|Mazda Motor Corporation|Painting truck washing system|
    DE3725611A1|1987-08-01|1989-02-09|Henkel Kgaa|METHOD FOR THE JOINT SEPARATION OF STONE ELEMENTS FROM VALUE METAL ELECTROLYTE SOLUTIONS|
    DE3725565A1|1987-08-01|1989-02-16|Peter Weil|METHOD AND SYSTEM FOR DE-PAINTING OBJECTS WITH A SUBMERSIBLE CONTAINER WITH SOLVENT|
    US5105556A|1987-08-12|1992-04-21|Hitachi, Ltd.|Vapor washing process and apparatus|
    US4838476A|1987-11-12|1989-06-13|Fluocon Technologies Inc.|Vapour phase treatment process and apparatus|
    EP0343233B1|1987-11-27|1994-02-02|Battelle Memorial Institute|Supercritical fluid reverse micelle separation|
    US5266205A|1988-02-04|1993-11-30|Battelle Memorial Institute|Supercritical fluid reverse micelle separation|
    US4933404A|1987-11-27|1990-06-12|Battelle Memorial Institute|Processes for microemulsion polymerization employing novel microemulsion systems|
    JP2663483B2|1988-02-29|1997-10-15|勝 西川|Method of forming resist pattern|
    US5185296A|1988-07-26|1993-02-09|Matsushita Electric Industrial Co., Ltd.|Method for forming a dielectric thin film or its pattern of high accuracy on a substrate|
    DE3836731A1|1988-10-28|1990-05-03|Henkel Kgaa|METHOD FOR SEPARATING STONE ELEMENTS FROM VALUE METAL ELECTROLYTE SOLUTIONS|
    US5013366A|1988-12-07|1991-05-07|Hughes Aircraft Company|Cleaning process using phase shifting of dense phase gases|
    US5051135A|1989-01-30|1991-09-24|Kabushiki Kaisha Tiyoda Seisakusho|Cleaning method using a solvent while preventing discharge of solvent vapors to the environment|
    DE3904514C2|1989-02-15|1999-03-11|Oeffentliche Pruefstelle Und T|Process for cleaning or washing parts of clothing or the like|
    DE4004111C2|1989-02-15|1999-08-19|Deutsches Textilforschzentrum|Process for the pretreatment of textile fabrics or yarns|
    EP0409972B1|1989-02-16|1992-10-21|PAWLISZYN, Janusz B.|Apparatus and method for delivering supercritical fluid|
    DE3906724C2|1989-03-03|1998-03-12|Deutsches Textilforschzentrum|Process for dyeing textile substrates|
    DE3906735C2|1989-03-03|1999-04-15|Deutsches Textilforschzentrum|Bleaching process|
    DE3906737C2|1989-03-03|1993-02-18|Deutsches Textilforschungszentrum Nord-West Ev, 4150 Krefeld, De||
    US5068040A|1989-04-03|1991-11-26|Hughes Aircraft Company|Dense phase gas photochemical process for substrate treatment|
    US5288333A|1989-05-06|1994-02-22|Dainippon Screen Mfg. Co., Ltd.|Wafer cleaning method and apparatus therefore|
    US5186718A|1989-05-19|1993-02-16|Applied Materials, Inc.|Staged-vacuum wafer processing system and method|
    US4923828A|1989-07-07|1990-05-08|Eastman Kodak Company|Gaseous cleaning method for silicon devices|
    US4983223A|1989-10-24|1991-01-08|Chenpatents|Apparatus and method for reducing solvent vapor losses|
    US5213619A|1989-11-30|1993-05-25|Jackson David P|Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids|
    US5370741A|1990-05-15|1994-12-06|Semitool, Inc.|Dynamic semiconductor wafer processing using homogeneous chemical vapors|
    US5279771A|1990-11-05|1994-01-18|Ekc Technology, Inc.|Stripping compositions comprising hydroxylamine and alkanolamine|
    JP2782560B2|1990-12-12|1998-08-06|富士写真フイルム株式会社|Stabilizing processing solution and method for processing silver halide color photographic light-sensitive material|
    US5306350A|1990-12-21|1994-04-26|Union Carbide Chemicals & Plastics Technology Corporation|Methods for cleaning apparatus using compressed fluids|
    US5143103A|1991-01-04|1992-09-01|International Business Machines Corporation|Apparatus for cleaning and drying workpieces|
    CA2059841A1|1991-01-24|1992-07-25|Ichiro Hayashida|Surface treating solutions and cleaning method|
    US5185058A|1991-01-29|1993-02-09|Micron Technology, Inc.|Process for etching semiconductor devices|
    US5201960A|1991-02-04|1993-04-13|Applied Photonics Research, Inc.|Method for removing photoresist and other adherent materials from substrates|
    AT395951B|1991-02-19|1993-04-26|Union Ind Compr Gase Gmbh|CLEANING OF WORKPIECES WITH ORGANIC RESIDUES|
    EP0514337B1|1991-05-17|1995-11-22|Ciba-Geigy Ag|Process for dyeing hydrophobic textile material with disperse dyestuffs in supercritical CO2|
    US5274129A|1991-06-12|1993-12-28|Idaho Research Foundation, Inc.|Hydroxamic acid crown ethers|
    US5730874A|1991-06-12|1998-03-24|Idaho Research Foundation, Inc.|Extraction of metals using supercritical fluid and chelate forming legand|
    US5225173A|1991-06-12|1993-07-06|Idaho Research Foundation, Inc.|Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors|
    US5356538A|1991-06-12|1994-10-18|Idaho Research Foundation, Inc.|Supercritical fluid extraction|
    US5965025A|1991-06-12|1999-10-12|Idaho Research Foundation, Inc.|Fluid extraction|
    US5279615A|1991-06-14|1994-01-18|The Clorox Company|Method and composition using densified carbon dioxide and cleaning adjunct to clean fabrics|
    US5174917A|1991-07-19|1992-12-29|Monsanto Company|Compositions containing n-ethyl hydroxamic acid chelants|
    US5431843A|1991-09-04|1995-07-11|The Clorox Company|Cleaning through perhydrolysis conducted in dense fluid medium|
    GB2259525B|1991-09-11|1995-06-28|Ciba Geigy Ag|Process for dyeing cellulosic textile material with disperse dyes|
    US5213622A|1991-10-11|1993-05-25|Air Products And Chemicals, Inc.|Cleaning agents for fabricating integrated circuits and a process for using the same|
    EP0543779A1|1991-11-20|1993-05-26|Ciba-Geigy Ag|Process for optical bleaching of hydrophobic textile material with disperse optical brightness in supercritical CO2|
    KR930019861A|1991-12-12|1993-10-19|완다 케이. 덴슨-로우|Coating method using dense gas|
    NZ246440A|1991-12-18|1996-01-26|Schering Corp|Process for cleaning vulcanized elastomeric articles using at least one supercritical fluid, purified articles produced thereby|
    US5474812A|1992-01-10|1995-12-12|Amann & Sohne Gmbh & Co.|Method for the application of a lubricant on a sewing yarn|
    US5688879A|1992-03-27|1997-11-18|The University Of North Carolina At Chapel Hill|Method of making fluoropolymers|
    US5496901A|1992-03-27|1996-03-05|University Of North Carolina|Method of making fluoropolymers|
    US5313965A|1992-06-01|1994-05-24|Hughes Aircraft Company|Continuous operation supercritical fluid treatment process and system|
    US5401322A|1992-06-30|1995-03-28|Southwest Research Institute|Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids|
    US5352327A|1992-07-10|1994-10-04|Harris Corporation|Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer|
    US5370742A|1992-07-13|1994-12-06|The Clorox Company|Liquid/supercritical cleaning with decreased polymer damage|
    US5267455A|1992-07-13|1993-12-07|The Clorox Company|Liquid/supercritical carbon dioxide dry cleaning system|
    US5368171A|1992-07-20|1994-11-29|Jackson; David P.|Dense fluid microwave centrifuge|
    US5339844A|1992-08-10|1994-08-23|Hughes Aircraft Company|Low cost equipment for cleaning using liquefiable gases|
    US5456759A|1992-08-10|1995-10-10|Hughes Aircraft Company|Method using megasonic energy in liquefied gases|
    US5316591A|1992-08-10|1994-05-31|Hughes Aircraft Company|Cleaning by cavitation in liquefied gas|
    US5261965A|1992-08-28|1993-11-16|Texas Instruments Incorporated|Semiconductor wafer cleaning using condensed-phase processing|
    DE4230485A1|1992-09-11|1994-03-17|Linde Ag|System for cleaning with liquefied or supercritical gases|
    EP0591595A1|1992-10-08|1994-04-13|International Business Machines Corporation|Molecular recording/reproducing method and recording medium|
    US5337446A|1992-10-27|1994-08-16|Autoclave Engineers, Inc.|Apparatus for applying ultrasonic energy in precision cleaning|
    US5355901A|1992-10-27|1994-10-18|Autoclave Engineers, Ltd.|Apparatus for supercritical cleaning|
    US5294261A|1992-11-02|1994-03-15|Air Products And Chemicals, Inc.|Surface cleaning using an argon or nitrogen aerosol|
    US5514220A|1992-12-09|1996-05-07|Wetmore; Paula M.|Pressure pulse cleaning|
    WO1994014240A1|1992-12-11|1994-06-23|The Regents Of The University Of California|Microelectromechanical signal processors|
    NZ260144A|1993-04-12|1995-10-26|Colgate Palmolive Co|Cleaning composition; contains three liquid phases which merge at a tricritical point; use for removing tar or grease from articles|
    US5403665A|1993-06-18|1995-04-04|Regents Of The University Of California|Method of applying a monolayer lubricant to micromachines|
    US5312882A|1993-07-30|1994-05-17|The University Of North Carolina At Chapel Hill|Heterogeneous polymerization in carbon dioxide|
    JP3338134B2|1993-08-02|2002-10-28|株式会社東芝|Semiconductor wafer processing method|
    US5364497A|1993-08-04|1994-11-15|Analog Devices, Inc.|Method for fabricating microstructures using temporary bridges|
    DE4429470A1|1993-08-23|1995-03-02|Ciba Geigy Ag|Process for improving the stability of dyeings on hydrophobic textile material|
    US5377705A|1993-09-16|1995-01-03|Autoclave Engineers, Inc.|Precision cleaning system|
    US5370740A|1993-10-01|1994-12-06|Hughes Aircraft Company|Chemical decomposition by sonication in liquid carbon dioxide|
    US5656097A|1993-10-20|1997-08-12|Verteq, Inc.|Semiconductor wafer cleaning system|
    US5509431A|1993-12-14|1996-04-23|Snap-Tite, Inc.|Precision cleaning vessel|
    US5417768A|1993-12-14|1995-05-23|Autoclave Engineers, Inc.|Method of cleaning workpiece with solvent and then with liquid carbon dioxide|
    DE4344021B4|1993-12-23|2006-06-29|Deutsches Textilforschungszentrum Nord-West E.V.|Coloring of sized textile fabrics of synthetic fiber material in supercritical media|
    TW274630B|1994-01-28|1996-04-21|Wako Zunyaku Kogyo Kk||
    US5641887A|1994-04-01|1997-06-24|University Of Pittsburgh|Extraction of metals in carbon dioxide and chelating agents therefor|
    US5872257A|1994-04-01|1999-02-16|University Of Pittsburgh|Further extractions of metals in carbon dioxide and chelating agents therefor|
    DE69523208T2|1994-04-08|2002-06-27|Texas Instruments Inc|Process for cleaning semiconductor wafers using liquefied gases|
    JP3320549B2|1994-04-26|2002-09-03|岩手東芝エレクトロニクス株式会社|Film removing method and film removing agent|
    US5467492A|1994-04-29|1995-11-21|Hughes Aircraft Company|Dry-cleaning of garments using liquid carbon dioxide under agitation as cleaning medium|
    US5934856A|1994-05-23|1999-08-10|Tokyo Electron Limited|Multi-chamber treatment system|
    KR0137841B1|1994-06-07|1998-04-27|문정환|Method for removing a etching waste material|
    US5482564A|1994-06-21|1996-01-09|Texas Instruments Incorporated|Method of unsticking components of micro-mechanical devices|
    US5637151A|1994-06-27|1997-06-10|Siemens Components, Inc.|Method for reducing metal contamination of silicon wafers during semiconductor manufacturing|
    US5522938A|1994-08-08|1996-06-04|Texas Instruments Incorporated|Particle removal in supercritical liquids using single frequency acoustic waves|
    US5501761A|1994-10-18|1996-03-26|At&T Corp.|Method for stripping conformal coatings from circuit boards|
    DE69521267T2|1994-11-08|2002-03-07|Raytheon Co|Dry cleaning clothes using gas jet swirling|
    US5505219A|1994-11-23|1996-04-09|Litton Systems, Inc.|Supercritical fluid recirculating system for a precision inertial instrument parts cleaner|
    US5629918A|1995-01-20|1997-05-13|The Regents Of The University Of California|Electromagnetically actuated micromachined flap|
    EP0726099B1|1995-01-26|2000-10-18|Texas Instruments Incorporated|Method of removing surface contamination|
    JP3277114B2|1995-02-17|2002-04-22|インターナショナル・ビジネス・マシーンズ・コーポレーション|Method of producing negative tone resist image|
    DE19506404C1|1995-02-23|1996-03-14|Siemens Ag|Separating and drying micro-mechanical elements without sticking|
    US5676705A|1995-03-06|1997-10-14|Lever Brothers Company, Division Of Conopco, Inc.|Method of dry cleaning fabrics using densified carbon dioxide|
    US5683977A|1995-03-06|1997-11-04|Lever Brothers Company, Division Of Conopco, Inc.|Dry cleaning system using densified carbon dioxide and a surfactant adjunct|
    US5681398A|1995-03-17|1997-10-28|Purex Co., Ltd.|Silicone wafer cleaning method|
    JPH08264500A|1995-03-27|1996-10-11|Sony Corp|Cleaning of substrate|
    JPH08330266A|1995-05-31|1996-12-13|Texas Instr Inc <Ti>|Method of cleansing and processing surface of semiconductor device or the like|
    CA2222126A1|1995-06-16|1997-01-03|Fred K. Forster|Microfabricated differential extraction device and method|
    US5783082A|1995-11-03|1998-07-21|University Of North Carolina|Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants|
    US5679169A|1995-12-19|1997-10-21|Micron Technology, Inc.|Method for post chemical-mechanical planarization cleaning of semiconductor wafers|
    US5804607A|1996-03-21|1998-09-08|International Business Machines Corporation|Process for making a foamed elastomeric polymer|
    US5726211A|1996-03-21|1998-03-10|International Business Machines Corporation|Process for making a foamed elastometric polymer|
    US5868856A|1996-07-25|1999-02-09|Texas Instruments Incorporated|Method for removing inorganic contamination by chemical derivitization and extraction|
    US5669251A|1996-07-30|1997-09-23|Hughes Aircraft Company|Liquid carbon dioxide dry cleaning system having a hydraulically powered basket|
    KR19980018262A|1996-08-01|1998-06-05|윌리엄 비.켐플러|I / O port and RAM memory addressing technology|
    US5881577A|1996-09-09|1999-03-16|Air Liquide America Corporation|Pressure-swing absorption based cleaning methods and systems|
    US5798438A|1996-09-09|1998-08-25|University Of Massachusetts|Polymers with increased order|
    US5908510A|1996-10-16|1999-06-01|International Business Machines Corporation|Residue removal by supercritical fluids|
    US5888050A|1996-10-30|1999-03-30|Supercritical Fluid Technologies, Inc.|Precision high pressure control assembly|
    US5797719A|1996-10-30|1998-08-25|Supercritical Fluid Technologies, Inc.|Precision high pressure control assembly|
    JPH10144757A|1996-11-08|1998-05-29|Dainippon Screen Mfg Co Ltd|Substrate processing device|
    US5896870A|1997-03-11|1999-04-27|International Business Machines Corporation|Method of removing slurry particles|
    US6149828A|1997-05-05|2000-11-21|Micron Technology, Inc.|Supercritical etching compositions and method of using same|
    US6114044A|1997-05-30|2000-09-05|Regents Of The University Of California|Method of drying passivated micromachines by dewetting from a liquid-based process|
    US5900354A|1997-07-03|1999-05-04|Batchelder; John Samuel|Method for optical inspection and lithography|
    US5893756A|1997-08-26|1999-04-13|Lsi Logic Corporation|Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing|
    WO1999010587A1|1997-08-29|1999-03-04|Micell Technologies|End functionalized polysiloxane surfactants in carbon dioxide formulations|
    US6100198A|1998-02-27|2000-08-08|Micron Technology, Inc.|Post-planarization, pre-oxide removal ozone treatment|
    US6200943B1|1998-05-28|2001-03-13|Micell Technologies, Inc.|Combination surfactant systems for use in carbon dioxide-based cleaning formulations|
    US6017820A|1998-07-17|2000-01-25|Cutek Research, Inc.|Integrated vacuum and plating cluster system|
    US6242165B1|1998-08-28|2001-06-05|Micron Technology, Inc.|Supercritical compositions for removal of organic material and methods of using same|
    US6277753B1|1998-09-28|2001-08-21|Supercritical Systems Inc.|Removal of CMP residue from semiconductors using supercritical carbon dioxide process|
    DE19860084B4|1998-12-23|2005-12-22|Infineon Technologies Ag|Method for structuring a substrate|US6846789B2|1998-03-30|2005-01-25|The Regents Of The University Of California|Composition and method for removing photoresist materials from electronic components|
    US6277753B1|1998-09-28|2001-08-21|Supercritical Systems Inc.|Removal of CMP residue from semiconductors using supercritical carbon dioxide process|
    US7064070B2|1998-09-28|2006-06-20|Tokyo Electron Limited|Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process|
    US6734121B2|1999-09-02|2004-05-11|Micron Technology, Inc.|Methods of treating surfaces of substrates|
    US6558432B2|1999-10-15|2003-05-06|R. R. Street & Co., Inc.|Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent|
    US6755871B2|1999-10-15|2004-06-29|R.R. Street & Co. Inc.|Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent|
    US6858089B2|1999-10-29|2005-02-22|Paul P. Castrucci|Apparatus and method for semiconductor wafer cleaning|
    US6748960B1|1999-11-02|2004-06-15|Tokyo Electron Limited|Apparatus for supercritical processing of multiple workpieces|
    CA2387341A1|1999-11-02|2001-05-10|Tokyo Electron Limited|Method and apparatus for supercritical processing of multiple workpieces|
    US7601112B2|2001-03-13|2009-10-13|Jackson David P|Dense fluid cleaning centrifugal phase shifting separation process and apparatus|
    CN1216415C|2000-04-25|2005-08-24|东京毅力科创株式会社|Method of depositing metal film and metal deposition cluster including supercritical drying/cleaning module|
    US6623355B2|2000-11-07|2003-09-23|Micell Technologies, Inc.|Methods, apparatus and slurries for chemical mechanical planarization|
    JP2002237481A|2001-02-09|2002-08-23|Kobe Steel Ltd|Method of cleaning microscopic structure|
    CN1628000A|2001-02-15|2005-06-15|米歇尔技术公司|Methods for cleaning microelectronic structures|
    US6602351B2|2001-02-15|2003-08-05|Micell Technologies, Inc.|Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures|
    US6596093B2|2001-02-15|2003-07-22|Micell Technologies, Inc.|Methods for cleaning microelectronic structures with cyclical phase modulation|
    US6641678B2|2001-02-15|2003-11-04|Micell Technologies, Inc.|Methods for cleaning microelectronic structures with aqueous carbon dioxide systems|
    US6562146B1|2001-02-15|2003-05-13|Micell Technologies, Inc.|Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide|
    US6905555B2|2001-02-15|2005-06-14|Micell Technologies, Inc.|Methods for transferring supercritical fluids in microelectronic and other industrial processes|
    US6613157B2|2001-02-15|2003-09-02|Micell Technologies, Inc.|Methods for removing particles from microelectronic structures|
    US6398875B1|2001-06-27|2002-06-04|International Business Machines Corporation|Process of drying semiconductor wafers using liquid or supercritical carbon dioxide|
    US6890855B2|2001-06-27|2005-05-10|International Business Machines Corporation|Process of removing residue material from a precision surface|
    US6653233B2|2001-06-27|2003-11-25|International Business Machines Corporation|Process of providing a semiconductor device with electrical interconnection capability|
    US6619304B2|2001-09-13|2003-09-16|Micell Technologies, Inc.|Pressure chamber assembly including non-mechanical drive means|
    US6706641B2|2001-09-13|2004-03-16|Micell Technologies, Inc.|Spray member and method for using the same|
    US6782900B2|2001-09-13|2004-08-31|Micell Technologies, Inc.|Methods and apparatus for cleaning and/or treating a substrate using CO2|
    US6666928B2|2001-09-13|2003-12-23|Micell Technologies, Inc.|Methods and apparatus for holding a substrate in a pressure chamber|
    US6763840B2|2001-09-14|2004-07-20|Micell Technologies, Inc.|Method and apparatus for cleaning substrates using liquid carbon dioxide|
    JP3978023B2|2001-12-03|2007-09-19|株式会社神戸製鋼所|High pressure processing method|
    KR100437455B1|2001-12-10|2004-06-23|삼성전자주식회사|Method of forming semiconductor device|
    US6737225B2|2001-12-28|2004-05-18|Texas Instruments Incorporated|Method of undercutting micro-mechanical device with super-critical carbon dioxide|
    US7326673B2|2001-12-31|2008-02-05|Advanced Technology Materials, Inc.|Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates|
    US7557073B2|2001-12-31|2009-07-07|Advanced Technology Materials, Inc.|Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist|
    US20040016450A1|2002-01-25|2004-01-29|Bertram Ronald Thomas|Method for reducing the formation of contaminants during supercritical carbon dioxide processes|
    JP2003224099A|2002-01-30|2003-08-08|Sony Corp|Surface treatment method|
    US6924086B1|2002-02-15|2005-08-02|Tokyo Electron Limited|Developing photoresist with supercritical fluid and developer|
    JP2006508521A|2002-02-15|2006-03-09|東京エレクトロン株式会社|Drying of resist using solvent bath and supercritical CO2|
    US7270941B2|2002-03-04|2007-09-18|Tokyo Electron Limited|Method of passivating of low dielectric materials in wafer processing|
    US7169540B2|2002-04-12|2007-01-30|Tokyo Electron Limited|Method of treatment of porous dielectric films to reduce damage during cleaning|
    US20040072706A1|2002-03-22|2004-04-15|Arena-Foster Chantal J.|Removal of contaminants using supercritical processing|
    US6736906B2|2002-04-10|2004-05-18|International Business Machines Corporation|Turbine part mount for supercritical fluid processor|
    US6521466B1|2002-04-17|2003-02-18|Paul Castrucci|Apparatus and method for semiconductor wafer test yield enhancement|
    US6764552B1|2002-04-18|2004-07-20|Novellus Systems, Inc.|Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials|
    US6669785B2|2002-05-15|2003-12-30|Micell Technologies, Inc.|Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide|
    JP2003338469A|2002-05-21|2003-11-28|Fujitsu Ltd|Abrasive, polishing method, and cleaning method|
    US20030217764A1|2002-05-23|2003-11-27|Kaoru Masuda|Process and composition for removing residues from the microstructure of an object|
    US6846380B2|2002-06-13|2005-01-25|The Boc Group, Inc.|Substrate processing apparatus and related systems and methods|
    DE10229000A1|2002-06-28|2004-01-29|Advanced Micro Devices, Inc., Sunnyvale|Device and method for reducing the oxidation of polished metal surfaces in a chemical mechanical polishing process|
    US20040050406A1|2002-07-17|2004-03-18|Akshey Sehgal|Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical|
    US20080000505A1|2002-09-24|2008-01-03|Air Products And Chemicals, Inc.|Processing of semiconductor components with dense processing fluids|
    US7282099B2|2002-09-24|2007-10-16|Air Products And Chemicals, Inc.|Dense phase processing fluids for microelectronic component manufacture|
    US20080004194A1|2002-09-24|2008-01-03|Air Products And Chemicals, Inc.|Processing of semiconductor components with dense processing fluids|
    US7267727B2|2002-09-24|2007-09-11|Air Products And Chemicals, Inc.|Processing of semiconductor components with dense processing fluids and ultrasonic energy|
    US6953041B2|2002-10-09|2005-10-11|Micell Technologies, Inc.|Compositions of transition metal species in dense phase carbon dioxide and methods of use thereof|
    US6943139B2|2002-10-31|2005-09-13|Advanced Technology Materials, Inc.|Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations|
    US6989358B2|2002-10-31|2006-01-24|Advanced Technology Materials, Inc.|Supercritical carbon dioxide/chemical formulation for removal of photoresists|
    US20060019850A1|2002-10-31|2006-01-26|Korzenski Michael B|Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations|
    US7485611B2|2002-10-31|2009-02-03|Advanced Technology Materials, Inc.|Supercritical fluid-based cleaning compositions and methods|
    JP2004158534A|2002-11-05|2004-06-03|Kobe Steel Ltd|Method for cleaning microscopic structure|
    US6722642B1|2002-11-06|2004-04-20|Tokyo Electron Limited|High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism|
    US6880560B2|2002-11-18|2005-04-19|Techsonic|Substrate processing apparatus for processing substrates using dense phase gas and sonic waves|
    US20040177867A1|2002-12-16|2004-09-16|Supercritical Systems, Inc.|Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal|
    US6875286B2|2002-12-16|2005-04-05|International Business Machines Corporation|Solid CO2 cleaning|
    US20040112409A1|2002-12-16|2004-06-17|Supercritical Sysems, Inc.|Fluoride in supercritical fluid for photoresist and residue removal|
    US6935352B2|2003-01-10|2005-08-30|S.C. Fluids, Inc.|Adding energy to a cleaning process fluid for removing photo resist, residues and particles from semiconductor substrates, photo masks, reticles, disks and flat-panel displays|
    US7101443B2|2003-01-29|2006-09-05|Intel Corporation|Supercritical carbon dioxide-based cleaning of metal lines|
    US7270137B2|2003-04-28|2007-09-18|Tokyo Electron Limited|Apparatus and method of securing a workpiece during high-pressure processing|
    JP2006528553A|2003-05-13|2006-12-21|イーケーシーテクノロジー，インコーポレイティド|Workpiece cleaning system and method using supercritical carbon dioxide|
    US20040231707A1|2003-05-20|2004-11-25|Paul Schilling|Decontamination of supercritical wafer processing equipment|
    US6806993B1|2003-06-04|2004-10-19|Texas Instruments Incorporated|Method for lubricating MEMS components|
    US6951769B2|2003-06-04|2005-10-04|Texas Instruments Incorporated|Method for stripping sacrificial layer in MEMS assembly|
    US20040266184A1|2003-06-30|2004-12-30|Ramachandrarao Vijayakumar S|Post-deposition modification of interlayer dielectrics|
    US20050006310A1|2003-07-10|2005-01-13|Rajat Agrawal|Purification and recovery of fluids in processing applications|
    US20050022850A1|2003-07-29|2005-02-03|Supercritical Systems, Inc.|Regulation of flow of processing chemistry only into a processing chamber|
    US20050029492A1|2003-08-05|2005-02-10|Hoshang Subawalla|Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols|
    US20050106895A1|2003-11-17|2005-05-19|Taiwan Semiconductor Manufacturing Co., Ltd.|Supercritical water application for oxide formation|
    JP4464125B2|2003-12-22|2010-05-19|ソニー株式会社|Structure manufacturing method and silicon oxide film etching agent|
    KR100534103B1|2004-01-14|2005-12-06|삼성전자주식회사|Method of fabricating a microelectronic device using supercritical fluid|
    US20050183740A1|2004-02-19|2005-08-25|Fulton John L.|Process and apparatus for removing residues from semiconductor substrates|
    US20050241672A1|2004-04-28|2005-11-03|Texas Instruments Incorporated|Extraction of impurities in a semiconductor process with a supercritical fluid|
    US20050261150A1|2004-05-21|2005-11-24|Battelle Memorial Institute, A Part Interest|Reactive fluid systems for removing deposition materials and methods for using same|
    US7195676B2|2004-07-13|2007-03-27|Air Products And Chemicals, Inc.|Method for removal of flux and other residue in dense fluid systems|
    US7304000B2|2004-08-19|2007-12-04|International Business Machines Corporation|Photoresist trimming process|
    US20060081273A1|2004-10-20|2006-04-20|Mcdermott Wayne T|Dense fluid compositions and processes using same for article treatment and residue removal|
    US20060102591A1|2004-11-12|2006-05-18|Tokyo Electron Limited|Method and system for treating a substrate using a supercritical fluid|
    US7491036B2|2004-11-12|2009-02-17|Tokyo Electron Limited|Method and system for cooling a pump|
    US20060102590A1|2004-11-12|2006-05-18|Tokyo Electron Limited|Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry|
    US20060102204A1|2004-11-12|2006-05-18|Tokyo Electron Limited|Method for removing a residue from a substrate using supercritical carbon dioxide processing|
    US20060102208A1|2004-11-12|2006-05-18|Tokyo Electron Limited|System for removing a residue from a substrate using supercritical carbon dioxide processing|
    US20060180174A1|2005-02-15|2006-08-17|Tokyo Electron Limited|Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator|
    US20060180572A1|2005-02-15|2006-08-17|Tokyo Electron Limited|Removal of post etch residue for a substrate with open metal surfaces|
    US7291565B2|2005-02-15|2007-11-06|Tokyo Electron Limited|Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid|
    US7008853B1|2005-02-25|2006-03-07|Infineon Technologies, Ag|Method and system for fabricating free-standing nanostructures|
    US7767145B2|2005-03-28|2010-08-03|Toyko Electron Limited|High pressure fourier transform infrared cell|
    US7407554B2|2005-04-12|2008-08-05|International Business Machines Corporation|Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent|
    US20060255012A1|2005-05-10|2006-11-16|Gunilla Jacobson|Removal of particles from substrate surfaces using supercritical processing|
    US7789971B2|2005-05-13|2010-09-07|Tokyo Electron Limited|Treatment of substrate using functionalizing agent in supercritical carbon dioxide|
    US20070012337A1|2005-07-15|2007-01-18|Tokyo Electron Limited|In-line metrology for supercritical fluid processing|
    US7598181B2|2005-07-19|2009-10-06|Micron Technology, Inc.|Process for enhancing solubility and reaction rates in supercritical fluids|
    US7582561B2|2005-09-01|2009-09-01|Micron Technology, Inc.|Method of selectively depositing materials on a substrate using a supercritical fluid|
    US20070190788A1|2006-02-15|2007-08-16|Manoj Balachandran|Wafer removing force reduction on cmp tool|
    US7981221B2|2008-02-21|2011-07-19|Micron Technology, Inc.|Rheological fluids for particle removal|
    SG181638A1|2009-12-11|2012-07-30|Lam Res Corp|Process to keep substrate surface wet during plating|
    US8629063B2|2011-06-08|2014-01-14|International Business Machines Corporation|Forming features on a substrate having varying feature densities|
    WO2015067275A1|2013-11-06|2015-05-14|Superwood A/S|A method for liquid treatment of a wood species|
    WO2018169830A1|2017-03-13|2018-09-20|The Regents Of The Universtiy Of California|A method of producing pre-lithiated graphite from recycled li-ion batteries|
    法律状态:
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    2013-12-18| LAPS| Lapse for failure to pay maintenance fees|
    2014-01-13| STCH| Information on status: patent discontinuation|Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
    2014-02-04| FP| Expired due to failure to pay maintenance fee|Effective date: 20131218 |
    优先权:
    申请号 | 申请日 | 专利标题
    US10198898P| true| 1998-09-28|1998-09-28||
    US09/407,628|US6277753B1|1998-09-28|1999-09-28|Removal of CMP residue from semiconductors using supercritical carbon dioxide process|
    US09/796,300|US6331487B2|1998-09-28|2001-02-27|Removal of polishing residue from substrate using supercritical fluid process|US09/796,300| US6331487B2|1998-09-28|2001-02-27|Removal of polishing residue from substrate using supercritical fluid process|
    US10/042,486| US6537916B2|1998-09-28|2001-10-18|Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process|
    US10/396,612| US7064070B2|1998-09-28|2003-03-24|Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process|
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